GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
LPI (LP Information)' newest research report, the “GaN Power Devices Industry Forecast” looks at past sales and reviews total world GaN Power Devices sales in 2022, providing a comprehensive analysis by region and market sector of projected GaN Power Devices sales for 2023 through 2029. With GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Power Devices industry.
This Insight Report provides a comprehensive analysis of the global GaN Power Devices lands cape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global GaN Power Devices market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Power Devices and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Electronic Grade Phosphoric Acid.
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https://www.lpinformationdata.com/reports/454264/gan-power-devices-2029
The global GaN Power Devices market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power Devices market by product type, application, key manufacturers and key regions and countries.
Top Manufactures in Global GaN Power Devices Includes:
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors
Efficient Power Conversion (EPC)
GaN Systems
Infineon
Market Segment by Type, covers:
600V
Others
Market Segment by Applications, can be divided into:
Server and Other IT Equipments
High-Efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices
In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.
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